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| Rev 2: Dec 2004 AOD442, AOD442L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AOD442 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. AOD442L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 60V ID = 38A RDS(ON) < 20m (VGS = 10V) RDS(ON) < 25m (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25C Power Dissipation TC=100C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C B Maximum 60 20 38 27 60 30 140 60 30 -55 to 175 Units V V A A mJ W C TC=25C G B TC=100C ID IDM IAR EAR PD TJ, TSTG Symbol t 10s Steady-State Steady-State RJA RJL Typ 17.4 51 1.8 Max 25 60 2.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD442. AOD442L Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A 4.5 IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=48V, V GS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, V DS=5V VGS=10V, ID=20A TJ=125C 1 60 16 31 20 5.6 0.74 1 4 1920 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 155 116 0.65 47.6 VGS=10V, V DS=30V, ID=20A 24.2 6 14.4 7.4 VGS=10V, V DS=30V, R L=1.5, RGEN=3 IF=20A, dI/dt=100A/s IF=20A, dI/dt=100A/s 5.1 28.2 5.5 34 46 41 0.8 68 30 2300 25 20 2.1 Min 60 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any a given application depends on the user's specific board design, and the maximum temperature fo 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T=25C. The SOA A curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOD442. AOD442L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 40 ID (A) 30 20 10 0 0 1 2 3 VGS=3V 4 5 10V 4.5V 40 4V ID(A) 30 20 10 0 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 25C 50 VDS=5V 125C 3.5V VDS (Volts) Fig 1: On-Region Characteristics 24 Normalized On-Resistance 22 RDS(ON) (m) 20 18 16 14 0 10 20 30 40 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=4.5V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 ID=20A 1.0E+01 125C 1.0E+00 IS (A) 1.0E-01 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C VGS=4.5V ID=20A VGS=10V ID=20A VGS=10V 50 40 RDS(ON) (m) 30 20 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. AOD442. AOD442L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=30V ID=20A Capacitance (pF) 3500 3000 2500 2000 1500 1000 500 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Crss Ciss 100.0 RDS(ON) limited 100s 1ms DC TJ(Max)=175C TA=25C 10s Power (W) 800 ID (Amps) 10.0 600 TJ(Max)=175C TA=25C 400 1.0 200 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 0 1E-05 1E-04 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 ZJc Normalized Transient Thermal Resistance D=Ton/T TJ,PK=Tc+PDM.ZJc .RJc RJC=2.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 10 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOD442, AOD442L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 ID(A), Peak Avalanche Current 50 40 30 20 10 0 0.00001 80 Power Dissipation (W) 0.001 tA = L ID BV - VDD 60 40 TA=25C 20 0.0001 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 50 40 50 40 Power (W) 30 20 10 0 0.001 TA=25C Current rating ID(A) 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 100 1000 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. |
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